gallium arsenide globalspec

Gallium Aluminum Arsenide - GlobalSpec

Find Gallium Aluminum Arsenide related suppliers, manufacturers, products and specifications on GlobalSpec - a trusted source of Gallium Aluminum Arsenide information.

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Gallium Arsenide (GaAs) Semiconductor Foundry Services ...

Company Information: Rogue Valley Micro is a leading supplier of Silicon Wafers and Thin Film deposition services to the Microelectronics Industry. With over 10,000 sq. ft. of manufacturing space RVM is capable of processing wafer sizes from 50mm-300mm in diameter. Wafer Processing: Thin Film; CVD ...

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Gallium Arsenide Solar Panels - GlobalSpec

Find Gallium Arsenide Solar Panels related suppliers, manufacturers, products and specifications on GlobalSpec - a trusted source of Gallium Arsenide Solar Panels information.

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ASTM F1404 - GlobalSpec

This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200 000/cm 2. Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the within ± 5° and must be suitably ...

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DIN 50454-1 - GlobalSpec

Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide A description is not available for this item.

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NPFC - GlobalSpec

semiconductor device, diode, gallium arsenide, mixer type 1n5764, 1n5764m and 1n5764mr This specification covers the detail requirements for Gallium Arsenide, Low Barrier, High Sensitivity, Schottky-Barrier Semiconductor Diode, for use as a first detector in Ku-band equipment.

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New tandem solar cell design reaches 25% ... - GlobalSpec

The new method layers the semiconductor material gallium arsenide phosphide onto Si because the two materials complement each other. Both absorb visible light, but gallium arsenide phosphide does so while Schematic shows the layered structure of the tandem solar device. Source: Shizhao Fan et al generating less waste heat.. During fabrication, material defects emerge in the layers ...

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GaAs MMIC Doubler for Military Radar and ... - GlobalSpec

Jul 14, 2017  The gallium arsenide (GaAs) MMIC CMD226N3 is a passive frequency multiplier housed in a quad-flat no-leads (QFN)-style package. The device is temperature stable and has a conversion gain of less than 2 decibels from nominal across the entire frequency band of operation.

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Record Conversion Efficiency for GaAs Solar ... - GlobalSpec

Alta's gallium arsenide modules perform at up to two times that of ordinary flexible solar cells, making them the current world leader in terms of module efficiency for thin film solar technology. Since 2010, Alta's GaAs single-junction cells have broken conversion efficiency records four times and still hold the world's highest (lab ...

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ASTM F1404 - GlobalSpec

This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200 000/cm 2. Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the within ± 5° and must be suitably ...

More

DIN 50454-1 - GlobalSpec

DIN 50454-1 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide

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GaAs MMIC Doubler for Military Radar and ... - GlobalSpec

Jul 14, 2017  The gallium arsenide (GaAs) MMIC CMD226N3 is a passive frequency multiplier housed in a quad-flat no-leads (QFN)-style package. The device is temperature stable and has a conversion gain of less than 2 decibels from nominal across the entire frequency band of operation.

More

Record Conversion Efficiency for GaAs Solar ... - GlobalSpec

Alta's gallium arsenide modules perform at up to two times that of ordinary flexible solar cells, making them the current world leader in terms of module efficiency for thin film solar technology. Since 2010, Alta's GaAs single-junction cells have broken conversion efficiency records four times and still hold the world's highest (lab ...

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NPFC - GlobalSpec

This specification covers the performance requirements for solid state optically coupled isolators in which a gallium aluminum arsenide diode light source is optically coupled to a silicon NPN phototransistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each type as specified in MIL-PRF-19500.

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AIAA S-111 - GlobalSpec

1801 Alexander Bell Drive, Suite 500 Reston, VA 20191 United States

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ASTM International - GlobalSpec

Jan 10, 2003  1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs (1 x) P x. 1.2 Photoluminescence measurements indicate the composition only ...

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Flat Gallium is Newest 2D Material - GlobalSpec

Mar 13, 2018  A method to engineer atomically flat gallium shows promise for nanoscale electronics. The 2D gallenene Gallenene structure after exfoliation from bulk gallium. Source: The Ajayan Research Group/Rice University developed by researchers from Rice University and the Indian Institute of Science, Bangalore, is a thin film of conductive material that is to gallium what graphene is to carbon.

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ASTM International - GlobalSpec

scope: 1.1 This test method is used to evaluate and compare the ability of stretch-wrap films to contain unitized loads during shipping. 1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory ...

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U.S., Swiss Researchers Break 35 Percent PV ... - GlobalSpec

Aug 28, 2017  An efficiency of 32.5 percent was documented with a gallium indium phosphide top cell, surpassing the previous record efficiency of 29.8 percent for a similar structure. Efficiencies approaching 36 percent were achieved when combining a gallium indium phosphide/gallium arsenide dual-junction cell with a silicon single-junction cell, just 2 ...

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AIAA - standards.globalspec

Find the most up-to-date version of S-112A at Engineering360. scope: This document establishes qualification and quality requirements for the electrical components integrated onto spacecraft solar panels that carry single crystal silicon solar cells or gallium arsenide solar cells having any number of junctions including those with metamorphic and inverted metamorphic structure.

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MMA052AA Datasheet - GlobalSpec

MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and space applications.

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ASTM International - GlobalSpec

1.1 These test methods cover the nondestructive measurement of bulk resistivity of silicon and certain gallium-arsenide slices and of the sheet resistance of thin films of silicon or gallium-arsenide fabricated on a limited range...

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ADPA9002ACGZN Datasheet - datasheets.globalspec

The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (P SAT) while requiring 385 mA from a 12 V supply.

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HMC637BPM5ETR Datasheet - datasheets.globalspec

The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2 ...

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AIAA S-111 - GlobalSpec

1801 Alexander Bell Drive, Suite 500 Reston, VA 20191 United States

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GaN technology to upgrade U.S. Army radar system - GlobalSpec

Sep 27, 2019  The insertion of GaN technology into this multi-mission mobile radar will provide superior efficiency, power density, reliability and lifecycle cost over the gallium arsenide

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ASTM International - GlobalSpec

Jan 10, 2003  1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs (1 x) P x. 1.2 Photoluminescence measurements indicate the composition only ...

More

ASTM International - GlobalSpec

scope: 1.1 This test method is used to evaluate and compare the ability of stretch-wrap films to contain unitized loads during shipping. 1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory ...

More

U.S., Swiss Researchers Break 35 Percent PV ... - GlobalSpec

Aug 28, 2017  An efficiency of 32.5 percent was documented with a gallium indium phosphide top cell, surpassing the previous record efficiency of 29.8 percent for a similar structure. Efficiencies approaching 36 percent were achieved when combining a gallium indium phosphide/gallium arsenide dual-junction cell with a silicon single-junction cell, just 2 ...

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Richardson RFPD RF Switches Data Sheets Engineering360

Find Richardson RFPD RF Switches Data Sheets on GlobalSpec. RF and Microwave Switch -- MA4AGSW1: M/A-COM Tech’s MA4AGSW1 is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST), PIN diode switch.

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ASTM International - GlobalSpec

100 Barr Harbor Drive West Conshohocken, PA 19428 USA Phone: (610) 832-9500

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Oxide and Semiconductor Combo Could Mean Big Things for ...

Gallium arsenide is one of a whole class of materials called III-V semiconductors, and this work opens a path to integrate oxide 2DEGs with others. "The ability to couple or to integrate these interesting oxide two-dimensional electron gases with gallium arsenide opens the way to devices that could benefit from the electrical and optical ...

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ASTM International - GlobalSpec

1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determin...

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HMC637BPM5ETR Datasheet - datasheets.globalspec

The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2 ...

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MMA052AA Datasheet - GlobalSpec

MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and space applications.

More

ASTM International - GlobalSpec

1.1 These test methods cover the nondestructive measurement of bulk resistivity of silicon and certain gallium-arsenide slices and of the sheet resistance of thin films of silicon or gallium-arsenide fabricated on a limited range...

More

GaN technology to upgrade U.S. Army radar system - GlobalSpec

Sep 27, 2019  The insertion of GaN technology into this multi-mission mobile radar will provide superior efficiency, power density, reliability and lifecycle cost over the gallium arsenide

More

ASTM International - GlobalSpec

1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determin...

More

ASTM International - GlobalSpec

Jan 10, 2003  1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs (1 x) P x. 1.2 Photoluminescence measurements indicate the composition only ...

More

Alta Devices Launches New Solar Cell for ... - GlobalSpec

The fourth generation of Alta Devices’ single-junction gallium arsenide cell technology is 40 percent lighter than the company’s previous offering, which results in an improved power-to-weight ratio of 160 percent. This technology is critical for unmanned aerial vehicles, solar cars and other electric vehicles.

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ASTM International - GlobalSpec

100 Barr Harbor Drive West Conshohocken, PA 19428 USA Phone: (610) 832-9500

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ASTM International - GlobalSpec

scope: 1.1 This test method is used to evaluate and compare the ability of stretch-wrap films to contain unitized loads during shipping. 1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory ...

More

photodiodes voltage amplifiers for 10 MHz operation ...

Jan 31, 2008  Hello Guest, Welcome to CR4! For high-speed photodiodes, look at PIN (Positive-Intrinsic-Negative) photodiodes. Perkin-Elmer manufactures gallium-arsenide PIN photodiodes with a bandwidth in excess of 3500 MHz, for example, so finding a suitable PIN diode in your frequency range shouldn't be too difficult.. Be sure to reverse-bias the diode in your circuit.

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Why is Diamond an Electrical Engineer’s ... - GlobalSpec

Aug 13, 2018  Figure 4. Increase in instrinsic carrier concentration as a function of temperature for several semiconductor materials. Source: Willander et al Journal of Material Science Springer Diamond and compound semiconductors such as silicon carbide (SiC), gallium arsenide (GaAs), and gallium nitride (GaN) are wide bandgap (WBG) semiconductors. WBG ...

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MGF1302-15 Datasheet - Mitsubishi Electric Electronics ...

Part Category: Transistors Manufacturer: Mitsubishi Electric Electronics USA, Inc. Description: RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET

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3SK183 Datasheet - Panasonic - Datasheets360

Part Category: Transistors Manufacturer: Panasonic Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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